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FDC021N30 Datasheet

FDC021N30 Cover
DatasheetFDC021N30
File Size505.61 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDC021N30
Description PT8 N 30V/20V, MOSFET

FDC021N30 - ON Semiconductor

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FDC021N30 FDC021N30 ON Semiconductor PT8 N 30V/20V, MOSFET 402

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URL Link

FDC021N30

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

26mOhm @ 6.1A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

710pF @ 15V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6

Package / Case

SOT-23-6 Thin, TSOT-23-6