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FDB8030L Datasheet

FDB8030L Cover
DatasheetFDB8030L
File Size282.44 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FDB8030L, FDP8030L
Description MOSFET N-CH 30V 80A D2PAK, MOSFET N-CH 30V 80A TO220

FDB8030L - ON Semiconductor

FDB8030L Datasheet Page 1
FDB8030L Datasheet Page 2
FDB8030L Datasheet Page 3
FDB8030L Datasheet Page 4
FDB8030L Datasheet Page 5

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URL Link

FDB8030L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10500pF @ 15V

FET Feature

-

Power Dissipation (Max)

187W (Tc)

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AB

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDP8030L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10500pF @ 15V

FET Feature

-

Power Dissipation (Max)

187W (Tc)

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3