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FDB3860 Datasheet

FDB3860 Cover
DatasheetFDB3860
File Size297.57 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDB3860
Description MOSFET N-CH 100V 6.4A D2PAK

FDB3860 - ON Semiconductor

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FDB3860 FDB3860 ON Semiconductor MOSFET N-CH 100V 6.4A D2PAK 271

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URL Link

FDB3860

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.4A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

37mOhm @ 5.9A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1740pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 71W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AB

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB