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FCU600N65S3R0 Datasheet

FCU600N65S3R0 Cover
DatasheetFCU600N65S3R0
File Size288.65 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FCU600N65S3R0
Description SUPERFET3 650V IPAK PKG

FCU600N65S3R0 - ON Semiconductor

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URL Link

FCU600N65S3R0

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 600µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

465pF @ 400V

FET Feature

-

Power Dissipation (Max)

54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Stub Leads, IPak