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| Datasheet | FCPF20N60FS |
| File Size | 646.08 KB |
| Total Pages | 11 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 7 part numbers |
| Associated Parts | FCPF20N60FS, FCP20N60FS, FCP20N60_F080, FCPF20N60TYDTU, FCPF20N60T, FCPF20N60, FCP20N60 |
| Description | MOSFET N-CH 600V 20A TO-220F, MOSFET N-CH 600V TO220-3, MOSFET N-CH 600V 20A TO-220, MOSFET N-CH 600V 20A TO-220F, MOSFET N-CH 600V 20A TO-220F |
FCPF20N60FS - ON Semiconductor
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Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V FET Feature - Power Dissipation (Max) 39W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V FET Feature - Power Dissipation (Max) 39W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F-3 (Y-Forming) Package / Case TO-220-3 Full Pack, Formed Leads |
Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V FET Feature - Power Dissipation (Max) 39W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V FET Feature - Power Dissipation (Max) 39W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |