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FCP110N65F Datasheet

FCP110N65F Cover
DatasheetFCP110N65F
File Size800.57 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FCP110N65F
Description MOSFET N-CH 650V 35A TO220

FCP110N65F - ON Semiconductor

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FCP110N65F FCP110N65F ON Semiconductor MOSFET N-CH 650V 35A TO220 1764

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URL Link

FCP110N65F

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FRFET®, SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

5V @ 3.5mA

Gate Charge (Qg) (Max) @ Vgs

145nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4895pF @ 100V

FET Feature

-

Power Dissipation (Max)

357W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3