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FCMT199N60 Datasheet

FCMT199N60 Cover
DatasheetFCMT199N60
File Size1,040.61 KB
Total Pages11
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FCMT199N60
Description MOSFET N-CH 600V 20.2A POWER88

FCMT199N60 - ON Semiconductor

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FCMT199N60 FCMT199N60 ON Semiconductor MOSFET N-CH 600V 20.2A POWER88 517

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URL Link

FCMT199N60

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

199mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2950pF @ 100V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power88

Package / Case

4-PowerTSFN