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FCH099N65S3_F155 Datasheet

FCH099N65S3_F155 Cover
DatasheetFCH099N65S3_F155
File Size442.22 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FCH099N65S3_F155, FCH099N65S3-F155
Description MOSFET N-CH 650V 30A TO247-3, SF3 650V 99MOHM E TO247L

FCH099N65S3_F155 - ON Semiconductor

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URL Link

FCH099N65S3_F155

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

99mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2480pF @ 400V

FET Feature

-

Power Dissipation (Max)

227W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

FCH099N65S3-F155

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

99mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2480pF @ 400V

FET Feature

-

Power Dissipation (Max)

227W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3