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FCB36N60NTM Datasheet

FCB36N60NTM Cover
DatasheetFCB36N60NTM
File Size736.28 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FCB36N60NTM
Description MOSFET N-CH 600V 36A D2PAK

FCB36N60NTM - ON Semiconductor

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URL Link

FCB36N60NTM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SupreMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

112nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4785pF @ 100V

FET Feature

-

Power Dissipation (Max)

312W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB