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EPC8010 Datasheet

EPC8010 Cover
DatasheetEPC8010
File Size1,416.99 KB
Total Pages7
ManufacturerEPC
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts EPC8010
Description GAN TRANS 100V 2.7A BUMPED DIE

EPC8010 - EPC

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EPC8010 EPC8010 EPC GAN TRANS 100V 2.7A BUMPED DIE 12701

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URL Link

EPC8010

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

160mOhm @ 500mA, 5V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.48nC @ 5V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

55pF @ 50V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die