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EPC8002 Datasheet

EPC8002 Cover
DatasheetEPC8002
File Size1,588.48 KB
Total Pages6
ManufacturerEPC
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts EPC8002
Description GANFET TRANS 65V 2.7A BUMPED DIE

EPC8002 - EPC

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URL Link

EPC8002

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

65V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

530mOhm @ 500mA, 5V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

21pF @ 32.5V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die