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EPC2212 Datasheet

EPC2212 Cover
DatasheetEPC2212
File Size975.57 KB
Total Pages6
ManufacturerEPC
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts EPC2212
Description AEC-Q101 GAN FET 100V 13.5 MOHM

EPC2212 - EPC

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EPC2212 EPC2212 EPC AEC-Q101 GAN FET 100V 13.5 MOHM 4474

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URL Link

EPC2212

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

18A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 11A, 5V

Vgs(th) (Max) @ Id

2.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

4nC @ 5V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

407pF @ 50V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die