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| Datasheet | EPC2106ENGRT |
| File Size | 1,564.58 KB |
| Total Pages | 7 |
| Manufacturer | EPC |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | EPC2106ENGRT, EPC2106 |
| Description | GAN TRANS 2N-CH 100V BUMPED DIE, GANFET TRANS SYM 100V BUMPED DIE |
EPC2106ENGRT - EPC
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Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.7A Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V Vgs(th) (Max) @ Id 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.7A Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V Vgs(th) (Max) @ Id 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |