Top

EPC2019 Datasheet

EPC2019 Cover
DatasheetEPC2019
File Size1,212.59 KB
Total Pages6
ManufacturerEPC
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts EPC2019
Description GAN TRANS 200V 8.5A BUMPED DIE

EPC2019 - EPC

EPC2019 Datasheet Page 1
EPC2019 Datasheet Page 2
EPC2019 Datasheet Page 3
EPC2019 Datasheet Page 4
EPC2019 Datasheet Page 5
EPC2019 Datasheet Page 6

The Products You May Be Interested In

EPC2019 EPC2019 EPC GAN TRANS 200V 8.5A BUMPED DIE 11862

More on Order

URL Link

EPC2019

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

8.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

50mOhm @ 7A, 5V

Vgs(th) (Max) @ Id

2.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

2.5nC @ 5V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 100V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die