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EPC2016C Datasheet

EPC2016C Cover
DatasheetEPC2016C
File Size980.67 KB
Total Pages6
ManufacturerEPC
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts EPC2016C
Description GANFET TRANS 100V 18A BUMPED DIE

EPC2016C - EPC

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URL Link

EPC2016C

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

18A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

16mOhm @ 11A, 5V

Vgs(th) (Max) @ Id

2.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

4.5nC @ 5V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

420pF @ 50V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die