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EMF21T2R Datasheet

EMF21T2R Cover
DatasheetEMF21T2R
File Size55.71 KB
Total Pages5
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts EMF21T2R, UMF21NTR
Description TRANS NPN PREBIAS/PNP 0.15W EMT6, TRANS NPN PREBIAS/PNP 0.15W UMT6

EMF21T2R - Rohm Semiconductor

EMF21T2R Datasheet Page 1
EMF21T2R Datasheet Page 2
EMF21T2R Datasheet Page 3
EMF21T2R Datasheet Page 4
EMF21T2R Datasheet Page 5

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URL Link

EMF21T2R

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

1 NPN Pre-Biased, 1 PNP

Current - Collector (Ic) (Max)

100mA, 500mA

Voltage - Collector Emitter Breakdown (Max)

50V, 12V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

10kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V / 270 @ 10mA, 2V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz, 260MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

EMT6

UMF21NTR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

1 NPN Pre-Biased, 1 PNP

Current - Collector (Ic) (Max)

100mA, 500mA

Voltage - Collector Emitter Breakdown (Max)

50V, 12V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

10kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V / 270 @ 10mA, 2V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz, 260MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

UMT6