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EM6M1T2R Datasheet

EM6M1T2R Cover
DatasheetEM6M1T2R
File Size116.67 KB
Total Pages7
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts EM6M1T2R
Description MOSFET N/P-CH 30V/20V EMT6

EM6M1T2R - Rohm Semiconductor

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EM6M1T2R

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V, 20V

Current - Continuous Drain (Id) @ 25°C

100mA, 200mA

Rds On (Max) @ Id, Vgs

8Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

0.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

13pF @ 5V

Power - Max

150mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

EMT6