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DTD114GKT146 Datasheet

DTD114GKT146 Cover
DatasheetDTD114GKT146
File Size288.91 KB
Total Pages5
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DTD114GKT146
Description TRANS PREBIAS NPN 200MW SMT3

DTD114GKT146 - Rohm Semiconductor

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DTD114GKT146 DTD114GKT146 Rohm Semiconductor TRANS PREBIAS NPN 200MW SMT3 240

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DTD114GKT146

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

-

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

56 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3