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DTD114ESTP Datasheet

DTD114ESTP Cover
DatasheetDTD114ESTP
File Size89.35 KB
Total Pages3
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DTD114ESTP
Description TRANS PREBIAS NPN 300MW SPT

DTD114ESTP - Rohm Semiconductor

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DTD114ESTP Datasheet Page 3

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DTD114ESTP DTD114ESTP Rohm Semiconductor TRANS PREBIAS NPN 300MW SPT 556

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DTD114ESTP

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

56 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

200MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

SC-72 Formed Leads

Supplier Device Package

SPT