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DTC123EET1G Datasheet

DTC123EET1G Cover
DatasheetDTC123EET1G
File Size96.33 KB
Total Pages11
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 7 part numbers
Associated Parts DTC123EET1G, NSBC123EF3T5G, NSVDTC123EM3T5G, MUN2231T1G, DTC123EM3T5G, MUN5231T1G, MMUN2231LT1G
Description TRANS PREBIAS NPN 200MW SC75, TRANS PREBIAS DUAL NPN, TRANS NPN 50V 0.1A SOT723, TRANS PREBIAS NPN 338MW SC59, TRANS PREBIAS NPN 260MW SOT723

DTC123EET1G - ON Semiconductor

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NSVDTC123EM3T5G NSVDTC123EM3T5G ON Semiconductor TRANS NPN 50V 0.1A SOT723 292

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MUN2231T1G MUN2231T1G ON Semiconductor TRANS PREBIAS NPN 338MW SC59 498

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URL Link

DTC123EET1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

8 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Supplier Device Package

SC-75, SOT-416

NSBC123EF3T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

8 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

254mW

Mounting Type

Surface Mount

Package / Case

SOT-1123

Supplier Device Package

SOT-1123

NSVDTC123EM3T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

8 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

260mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

SOT-723

MUN2231T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

8 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

338mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SC-59

DTC123EM3T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

8 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

260mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

SOT-723

MUN5231T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

8 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

202mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SC-70-3 (SOT323)

MMUN2231LT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

8 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

246mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)