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DMT6007LFG-13 Datasheet

DMT6007LFG-13 Cover
DatasheetDMT6007LFG-13
File Size309.14 KB
Total Pages8
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts DMT6007LFG-13, DMT6007LFG-7
Description MOSFET BVDSS: 41V 60V POWERDI333, MOSFET BVDSS: 41V 60V POWERDI333

DMT6007LFG-13 - Diodes Incorporated

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URL Link

DMT6007LFG-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2090pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

DMT6007LFG-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2090pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN