Top

DMT10H010LPS-13 Datasheet

DMT10H010LPS-13 Cover
DatasheetDMT10H010LPS-13
File Size459.5 KB
Total Pages8
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DMT10H010LPS-13
Description MOSFET N-CH 100V 9.4A

DMT10H010LPS-13 - Diodes Incorporated

DMT10H010LPS-13 Datasheet Page 1
DMT10H010LPS-13 Datasheet Page 2
DMT10H010LPS-13 Datasheet Page 3
DMT10H010LPS-13 Datasheet Page 4
DMT10H010LPS-13 Datasheet Page 5
DMT10H010LPS-13 Datasheet Page 6
DMT10H010LPS-13 Datasheet Page 7
DMT10H010LPS-13 Datasheet Page 8

The Products You May Be Interested In

DMT10H010LPS-13 DMT10H010LPS-13 Diodes Incorporated MOSFET N-CH 100V 9.4A 8601

More on Order

URL Link

DMT10H010LPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.4A (Ta), 98A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

71nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 50V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 139W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN