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DMP2005UFG-7 Datasheet

DMP2005UFG-7 Cover
DatasheetDMP2005UFG-7
File Size386.89 KB
Total Pages7
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts DMP2005UFG-7, DMP2005UFG-13
Description MOSFET P-CH 20V 89A POWERDI3333, MOSFET P-CH 20V 89A POWERDI3333

DMP2005UFG-7 - Diodes Incorporated

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DMP2005UFG-13 DMP2005UFG-13 Diodes Incorporated MOSFET P-CH 20V 89A POWERDI3333 557

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URL Link

DMP2005UFG-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

89A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

4mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

4670pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

DMP2005UFG-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

89A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

4mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

4670pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN