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DMN6140LQ-13 Datasheet

DMN6140LQ-13 Cover
DatasheetDMN6140LQ-13
File Size559.97 KB
Total Pages6
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts DMN6140LQ-13, DMN6140LQ-7
Description MOSFET N-CH 60V 1.6A SOT23, MOSFET N-CH 60V 1.6A SOT23

DMN6140LQ-13 - Diodes Incorporated

DMN6140LQ-13 Datasheet Page 1
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DMN6140LQ-13 Datasheet Page 6

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URL Link

DMN6140LQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

140mOhm @ 1.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

315pF @ 40V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

DMN6140LQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

140mOhm @ 1.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

315pF @ 40V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3