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| Datasheet | DMN30H4D0LFDE-13 |
| File Size | 390.78 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN30H4D0LFDE-13, DMN30H4D0LFDE-7 |
| Description | MOSFET N-CH 300V 0.55A 6UDFN, MOSFET N-CH 300V .55A 6UDFN |
DMN30H4D0LFDE-13 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 550mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V Rds On (Max) @ Id, Vgs 4Ohm @ 300mA, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 187.3pF @ 25V FET Feature - Power Dissipation (Max) 630mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type E) Package / Case 6-UDFN Exposed Pad |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 550mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V Rds On (Max) @ Id, Vgs 4Ohm @ 300mA, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 187.3pF @ 25V FET Feature - Power Dissipation (Max) 630mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type E) Package / Case 6-UDFN Exposed Pad |