Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | DMN3016LFDF-13 |
| File Size | 521.04 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN3016LFDF-13, DMN3016LFDF-7 |
| Description | MOSFET N-CH 30V 12A UDFN2020-6, MOSFET N-CH 30V 12A UDFN2020-6 |
DMN3016LFDF-13 - Diodes Incorporated
The Products You May Be Interested In
 |
DMN3016LFDF-13 | Diodes Incorporated | MOSFET N-CH 30V 12A UDFN2020-6 | 124 More on Order |
 |
DMN3016LFDF-7 | Diodes Incorporated | MOSFET N-CH 30V 12A UDFN2020-6 | 7503 More on Order |
URL Link
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1415pF @ 15V FET Feature - Power Dissipation (Max) 2.02W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type F) Package / Case 6-UDFN Exposed Pad |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1415pF @ 15V FET Feature - Power Dissipation (Max) 2.02W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type F) Package / Case 6-UDFN Exposed Pad |