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DMN2501UFB4-7 Datasheet

DMN2501UFB4-7 Cover
DatasheetDMN2501UFB4-7
File Size601.49 KB
Total Pages7
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DMN2501UFB4-7
Description MOSFET N-CH 20V 1A 3DFN

DMN2501UFB4-7 - Diodes Incorporated

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URL Link

DMN2501UFB4-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

400mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2nC @ 10V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

82pF @ 16V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X2-DFN1006-3

Package / Case

3-XFDFN