Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | DMN2400UFDQ-7 |
| File Size | 508.64 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN2400UFDQ-7, DMN2400UFDQ-13 |
| Description | MOSFET N-CH 20V 0.9A DFN1212-3, MOSFET N-CH 20V 0.9A DFN1212-3 |
DMN2400UFDQ-7 - Diodes Incorporated
The Products You May Be Interested In
 |
DMN2400UFDQ-7 | Diodes Incorporated | MOSFET N-CH 20V 0.9A DFN1212-3 | 384 More on Order |
|
DMN2400UFDQ-13 | Diodes Incorporated | MOSFET N-CH 20V 0.9A DFN1212-3 | 275 More on Order |
URL Link
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 600mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 37pF @ 16V FET Feature - Power Dissipation (Max) 400mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN1212-3 (Type C) Package / Case 3-PowerUDFN |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 600mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 37pF @ 16V FET Feature - Power Dissipation (Max) 400mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN1212-3 (Type C) Package / Case 3-PowerUDFN |