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DMN2016UTS-13 Datasheet

DMN2016UTS-13 Cover
DatasheetDMN2016UTS-13
File Size168.09 KB
Total Pages6
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DMN2016UTS-13
Description MOSFET 2N-CH 20V 8.58A 8-TSSOP

DMN2016UTS-13 - Diodes Incorporated

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DMN2016UTS-13 DMN2016UTS-13 Diodes Incorporated MOSFET 2N-CH 20V 8.58A 8-TSSOP 46930

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URL Link

DMN2016UTS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8.58A

Rds On (Max) @ Id, Vgs

14.5mOhm @ 9.4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1495pF @ 10V

Power - Max

880mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP