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DMN2016LHAB-7 Datasheet

DMN2016LHAB-7 Cover
DatasheetDMN2016LHAB-7
File Size297.06 KB
Total Pages6
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DMN2016LHAB-7
Description MOSFET 2N-CH 20V 7.5A 6UDFN

DMN2016LHAB-7 - Diodes Incorporated

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DMN2016LHAB-7 DMN2016LHAB-7 Diodes Incorporated MOSFET 2N-CH 20V 7.5A 6UDFN 552

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URL Link

DMN2016LHAB-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7.5A

Rds On (Max) @ Id, Vgs

15.5mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1550pF @ 10V

Power - Max

1.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Supplier Device Package

U-DFN2030-6