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DMN2011UFDF-13 Datasheet

DMN2011UFDF-13 Cover
DatasheetDMN2011UFDF-13
File Size602.11 KB
Total Pages7
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts DMN2011UFDF-13, DMN2011UFDF-7
Description MOSFET N-CH 20V 14.2A UDFN2020-6, MOSFET N-CH 20V 14.2A UDFN2020-6

DMN2011UFDF-13 - Diodes Incorporated

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URL Link

DMN2011UFDF-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

14.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2248pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6 (Type F)

Package / Case

6-UDFN Exposed Pad

DMN2011UFDF-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

14.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2248pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6 (Type F)

Package / Case

6-UDFN Exposed Pad