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| Datasheet | DMG3N60SJ3 |
| File Size | 436.65 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMG3N60SJ3 |
| Description | MOSFET BVDSS: 501V 650V TO251 |
DMG3N60SJ3 - Diodes Incorporated
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DMG3N60SJ3 | Diodes Incorporated | MOSFET BVDSS: 501V 650V TO251 | 581 More on Order |
URL Link
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Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 354pF @ 25V FET Feature - Power Dissipation (Max) 41W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 Package / Case TO-251-3, IPak, Short Leads |