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CP773-CMPDM302PH-WN Datasheet

CP773-CMPDM302PH-WN Cover
DatasheetCP773-CMPDM302PH-WN
File Size854.92 KB
Total Pages5
ManufacturerCentral Semiconductor Corp
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts CP773-CMPDM302PH-WN, CP773-CMPDM302PH-CT
Description MOSFET P-CH 30V, MOSFET P-CH 30V

CP773-CMPDM302PH-WN - Central Semiconductor Corp

CP773-CMPDM302PH-WN Datasheet Page 1
CP773-CMPDM302PH-WN Datasheet Page 2
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CP773-CMPDM302PH-WN Datasheet Page 5

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URL Link

CP773-CMPDM302PH-WN

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

91mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.6nC @ 5V

Vgs (Max)

12V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 10V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die

CP773-CMPDM302PH-CT

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

91mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.6nC @ 5V

Vgs (Max)

12V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 10V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die