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| Datasheet | CMG06(TE12L,Q,M) |
| File Size | 105.93 KB |
| Total Pages | 4 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | CMG06(TE12L,Q,M) |
| Description | DIODE GEN PURP 600V 1A M-FLAT |
CMG06(TE12L,Q,M) - Toshiba Semiconductor and Storage
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URL Link
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Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case SOD-128 Supplier Device Package M-FLAT (2.4x3.8) Operating Temperature - Junction -40°C ~ 150°C |