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CLS03 Datasheet

CLS03,LNITTOQ(O Cover
DatasheetCLS03,LNITTOQ(O
File Size218.92 KB
Total Pages5
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 8 part numbers
Associated Parts CLS03,LNITTOQ(O, CLS03(TE16R,Q), CLS03(TE16L,SQC,Q), CLS03(TE16L,PSD,Q), CLS03(TE16L,PCD,Q), CLS03(TE16L,DNSO,Q, CLS03(T6L,SHINA,Q), CLS03(T6L,CANO-O,Q
Description DIODE SCHOTTKY 60V 10A L-FLAT, DIODE SCHOTTKY 60V 10A L-FLAT, DIODE SCHOTTKY 60V 10A L-FLAT, DIODE SCHOTTKY 60V 10A L-FLAT, DIODE SCHOTTKY 60V 10A L-FLAT

CLS03,LNITTOQ(O - Toshiba Semiconductor and Storage

CLS03 Datasheet Page 1
CLS03 Datasheet Page 2
CLS03 Datasheet Page 3
CLS03 Datasheet Page 4
CLS03 Datasheet Page 5

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CLS03,LNITTOQ(O

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.58V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 60V

Capacitance @ Vr, F

345pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C

CLS03(TE16R,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.58V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 60V

Capacitance @ Vr, F

345pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C

CLS03(TE16L,SQC,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.58V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 60V

Capacitance @ Vr, F

345pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C

CLS03(TE16L,PSD,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.58V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 60V

Capacitance @ Vr, F

345pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C

CLS03(TE16L,PCD,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.58V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 60V

Capacitance @ Vr, F

345pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C

CLS03(TE16L,DNSO,Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.58V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 60V

Capacitance @ Vr, F

345pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C

CLS03(T6L,SHINA,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.58V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 60V

Capacitance @ Vr, F

345pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C

CLS03(T6L,CANO-O,Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.58V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 60V

Capacitance @ Vr, F

345pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C