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CLH01(TE16R Datasheet

CLH01(TE16R,Q) Cover
DatasheetCLH01(TE16R,Q)
File Size211.53 KB
Total Pages5
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 2 part numbers
Associated Parts CLH01(TE16R,Q), CLH01(TE16L,Q)
Description DIODE GEN PURP 200V 3A L-FLAT, DIODE GEN PURP 200V 3A L-FLAT

CLH01(TE16R,Q) - Toshiba Semiconductor and Storage

CLH01(TE16R Datasheet Page 1
CLH01(TE16R Datasheet Page 2
CLH01(TE16R Datasheet Page 3
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CLH01(TE16R Datasheet Page 5

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URL Link

CLH01(TE16R,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

3A (DC)

Voltage - Forward (Vf) (Max) @ If

0.98V @ 3A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

35ns

Current - Reverse Leakage @ Vr

10µA @ 200V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 150°C

CLH01(TE16L,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

3A (DC)

Voltage - Forward (Vf) (Max) @ If

0.98V @ 3A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

35ns

Current - Reverse Leakage @ Vr

10µA @ 200V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 150°C