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BYV30-600PQ Datasheet

BYV30-600PQ Cover
DatasheetBYV30-600PQ
File Size266.68 KB
Total Pages10
ManufacturerWeEn Semiconductors
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts BYV30-600PQ, BYC30B-600PJ
Description DIODE GEN PURP 600V 30A TO220AC, DIODE GEN PURP 600V 30A D2PAK

BYV30-600PQ - WeEn Semiconductors

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BYV30-600PQ

WeEn Semiconductors

Manufacturer

WeEn Semiconductors

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

1.55V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

10µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

175°C (Max)

BYC30B-600PJ

WeEn Semiconductors

Manufacturer

WeEn Semiconductors

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

2.75V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

35ns

Current - Reverse Leakage @ Vr

10µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Operating Temperature - Junction

175°C (Max)