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BYV29F-600 Datasheet

BYV29F-600,127 Cover
DatasheetBYV29F-600,127
File Size416.45 KB
Total Pages11
ManufacturerWeEn Semiconductors
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts BYV29F-600,127, BYV29-600,127
Description DIODE GEN PURP 600V 9A TO220AC, DIODE GEN PURP 600V 9A TO220AC

BYV29F-600,127 - WeEn Semiconductors

BYV29F-600 Datasheet Page 1
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BYV29F-600 Datasheet Page 11

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URL Link

BYV29F-600,127

WeEn Semiconductors

Manufacturer

WeEn Semiconductors

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

9A

Voltage - Forward (Vf) (Max) @ If

1.9V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

35ns

Current - Reverse Leakage @ Vr

50µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

150°C (Max)

BYV29-600,127

WeEn Semiconductors

Manufacturer

WeEn Semiconductors

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

9A

Voltage - Forward (Vf) (Max) @ If

1.25V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

60ns

Current - Reverse Leakage @ Vr

50µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

150°C (Max)