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BYR29X-800 Datasheet

BYR29X-800,127 Cover
DatasheetBYR29X-800,127
File Size215.89 KB
Total Pages11
ManufacturerWeEn Semiconductors
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts BYR29X-800,127
Description DIODE GEN PURP 800V 8A TO220F

BYR29X-800,127 - WeEn Semiconductors

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BYR29X-800,127 BYR29X-800,127 WeEn Semiconductors DIODE GEN PURP 800V 8A TO220F 142

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BYR29X-800,127

WeEn Semiconductors

Manufacturer

WeEn Semiconductors

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.7V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

10µA @ 800V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2 Full Pack, Isolated Tab

Supplier Device Package

TO-220FP

Operating Temperature - Junction

150°C (Max)