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| Datasheet | BYG23T-M3/TR3 |
| File Size | 83.18 KB |
| Total Pages | 5 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BYG23T-M3/TR3, BYG23T-M3/TR |
| Description | DIODE AVALANCHE 1300V 1A DO214AC, DIODE AVALANCHE 1300V 1A DO214AC |
BYG23T-M3/TR3 - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1300V Current - Average Rectified (Io) 1A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 5µA @ 1300V Capacitance @ Vr, F 9pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AC, SMA Supplier Device Package DO-214AC (SMA) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1300V Current - Average Rectified (Io) 1A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 5µA @ 1300V Capacitance @ Vr, F 9pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AC, SMA Supplier Device Package DO-214AC (SMA) Operating Temperature - Junction -55°C ~ 150°C |