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BYC8B-600PJ Datasheet

BYC8B-600PJ Cover
DatasheetBYC8B-600PJ
File Size241.82 KB
Total Pages10
ManufacturerWeEn Semiconductors
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts BYC8B-600PJ
Description DIODE GEN PURP 600V 8A D2PAK

BYC8B-600PJ - WeEn Semiconductors

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URL Link

BYC8B-600PJ

WeEn Semiconductors

Manufacturer

WeEn Semiconductors

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

3.4V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

18ns

Current - Reverse Leakage @ Vr

20µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Operating Temperature - Junction

175°C (Max)