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BYC30-1200PQ Datasheet

BYC30-1200PQ Cover
DatasheetBYC30-1200PQ
File Size343.91 KB
Total Pages11
ManufacturerWeEn Semiconductors
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts BYC30-1200PQ
Description DIODE GEN PURP 1.2KV 30A TO220AC

BYC30-1200PQ - WeEn Semiconductors

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BYC30-1200PQ BYC30-1200PQ WeEn Semiconductors DIODE GEN PURP 1.2KV 30A TO220AC 292

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BYC30-1200PQ

WeEn Semiconductors

Manufacturer

WeEn Semiconductors

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

3.3V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

65ns

Current - Reverse Leakage @ Vr

250µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

175°C (Max)