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BUZ31L H Datasheet

BUZ31L H Cover
DatasheetBUZ31L H
File Size420.59 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BUZ31L H
Description MOSFET N-CH 200V 13.5A TO220-3

BUZ31L H - Infineon Technologies

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BUZ31L H

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

13.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

200mOhm @ 7A, 5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

FET Feature

-

Power Dissipation (Max)

95W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3