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BUK9E2R8-60E Datasheet

BUK9E2R8-60E,127 Cover
DatasheetBUK9E2R8-60E,127
File Size328.53 KB
Total Pages14
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts BUK9E2R8-60E,127
Description MOSFET N-CH 60V 120A I2PAK

BUK9E2R8-60E,127 - NXP

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BUK9E2R8-60E,127 BUK9E2R8-60E,127 NXP MOSFET N-CH 60V 120A I2PAK 376

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

17450pF @ 25V

FET Feature

-

Power Dissipation (Max)

349W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA