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BUK98150-55A Datasheet

BUK98150-55A,135 Cover
DatasheetBUK98150-55A,135
File Size744.1 KB
Total Pages13
ManufacturerNXP
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts BUK98150-55A,135, BUK98150-55A/CUF
Description MOSFET N-CH 55V 5.5A SOT-223, MOSFET N-CH 55V 5.5A SOT223

BUK98150-55A,135 - NXP

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BUK98150-55A/CUF BUK98150-55A/CUF Nexperia MOSFET N-CH 55V 5.5A SOT223 104076

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URL Link

Manufacturer

NXP USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

137mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.3nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

320pF @ 25V

FET Feature

-

Power Dissipation (Max)

8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

BUK98150-55A/CUF

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

137mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.3nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

320pF @ 25V

FET Feature

-

Power Dissipation (Max)

8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-73

Package / Case

TO-261-4, TO-261AA