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BUK7Y08-40B/C Datasheet

BUK7Y08-40B/C,115 Cover
DatasheetBUK7Y08-40B/C,115
File Size806.16 KB
Total Pages14
ManufacturerNXP
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts BUK7Y08-40B/C,115, BUK7Y08-40B,115
Description MOSFET N-CH 40V 75A LFPAK, MOSFET N-CH 40V 75A LFPAK

BUK7Y08-40B/C,115 - NXP

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

36.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2040pF @ 25V

FET Feature

-

Power Dissipation (Max)

105W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

BUK7Y08-40B,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

36.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2040pF @ 25V

FET Feature

-

Power Dissipation (Max)

105W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669