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BUK7E2R7-30B Datasheet

BUK7E2R7-30B,127 Cover
DatasheetBUK7E2R7-30B,127
File Size306.92 KB
Total Pages15
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts BUK7E2R7-30B,127
Description MOSFET N-CH 30V 75A I2PAK

BUK7E2R7-30B,127 - NXP

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BUK7E2R7-30B,127 BUK7E2R7-30B,127 NXP MOSFET N-CH 30V 75A I2PAK 303

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6212pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA