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| Datasheet | BSS192PE6327 |
| File Size | 79.38 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BSS192PE6327 |
| Description | MOSFET P-CH 250V 0.19A SOT-89 |
BSS192PE6327 - Infineon Technologies
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BSS192PE6327 | Infineon Technologies | MOSFET P-CH 250V 0.19A SOT-89 | 474 More on Order |
URL Link
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Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V Rds On (Max) @ Id, Vgs 12Ohm @ 190mA, 10V Vgs(th) (Max) @ Id 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT89 Package / Case TO-243AA |