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BSO330N02KGFUMA1 Datasheet

BSO330N02KGFUMA1 Cover
DatasheetBSO330N02KGFUMA1
File Size531.63 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSO330N02KGFUMA1
Description MOSFET 2N-CH 20V 5.4A 8DSO

BSO330N02KGFUMA1 - Infineon Technologies

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URL Link

BSO330N02KGFUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.4A

Rds On (Max) @ Id, Vgs

30mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

4.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

730pF @ 10V

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

PG-DSO-8