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BSO215C Datasheet

BSO215C Cover
DatasheetBSO215C
File Size153.57 KB
Total Pages13
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSO215C
Description MOSFET N/P-CH 20V 3.7A 8SOIC

BSO215C - Infineon Technologies

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URL Link

BSO215C

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.7A

Rds On (Max) @ Id, Vgs

100mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id

2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

11.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

246pF @ 25V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO